Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a “target” that is a source onto a “substrate” such as a silicon wafer. In RF sputtering there are a cathode (the target) and a anode, in series with a blocking capacitor (C). The capacitor is part of an impedance-matching network that proves the power transfer from the RF source to the plasma discharge. The power supply is a high voltage RF source often fixed at 13.56 MHz. The blocking capacitor C is placed in the circuit to develop the all-important DC self-bias, and a matching network is utilized to optimize power transfer from the RF source to the plasma. RF-sputtering offers advantages over DC; in particular sputtering of an electrically insulating target become possible.
One of the earliest widespread commercial applications of sputter deposition, which is still one of its most important applications, is in the production of computer hard disks. Sputtering is used extensively in the semiconductor industry to deposit thin films of various materials in integrated circuit processing. Thin antireflection coatings on glass for optical applications are also deposited by sputtering. Because of the low substrate temperatures used, sputtering is an ideal method to deposit contact metals for thin-film transistors. Another familiar application of sputtering is low-emissivity coatings on glass, used in double-pane window assemblies. The coating is a multilayer containing silver and metal oxides such as zinc oxide, tin oxide, or titanium dioxide. A large industry has developed around tool bit coating using sputtered nitrides, such as titanium nitride, creating the familiar gold colored hard coat.
Feature and benefit
Turbo molecular pump to provide fast and clean oil free high vacuum
User friendly front panel color LCD based touch screen Siemens HMI control
Siemens PLC based process automation with recipe
Substrate heating facility up to 300°C
Three different material can be deposited individually and at the same time
Isothermal sample holder
Full range pressure measurement
Fully rotational stage design results in outstanding process control which guarantees superior uniformities and low operational costs.
Recipe guarantee: offers starter recipes for every process utilizing its extensive library of process recipes with guaranteed process verification.
High resolution film thickness monitor
Maintenance friendly mechanical design.
Shutter Assembly for All Sources
Mass Flow Controller based gas control system
|Wafer size||Up to 100mm|
|Sputtering material||Au, Cr, Ni, Ag, Al, Si3N4, SiO2 …|
|source||Three 600W RF generator|
|Process temperature||Up to 300⁰C|
|Ultimate pressure||˂ 5 × 10-6|
Graphite substrate heating system
Wafer fully rotational stage